Samsung said on Thursday that it has begun mass production of dual data rate 5 (DDR5) DRAM manufactured using a 12 nanometer (nm) layer process node. The tech giant announced the development of 16Gb DDR5 DRAM in December last year.
Started mass production of 12nm DRAM, making it the most advanced DRAM among existing DRAMs, at a time when the memory chip industry is going through a downturnshows that Samsung, the world’s largest memory chip maker, intends to maintain its leadership in this area and beyond.
According to Samsung, compared to the previous generation, the new chip has a 23% reduction in power consumption while the wafer yield increases by 20%, meaning that 20% more chips can be produced from a single wafer because the chip is smaller than the previous generation. previous generation. previous generation.
The tech giant says the reduced power consumption from 16Gb DDR5 DRAM will allow server and data center operators to reduce their energy consumption and carbon footprint.
The chip also has a top speed of 7.2Gbps, which means it can handle 60GB in about a second and is aimed at data centers, AI, and new computing applications.
The 12nm node is achieved by Samsung using a new high-k material that allows the chip to accurately distinguish differences in data signals.
DRAM was verified for compatibility with AMD in December, and Samsung said it is working with more global IT companies at the moment.
